Kingston 39P5429-006.AO01 2GB vs Crucial Technology BL8G32C16U4WL.M8FE 8GB

总分

Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

总分

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

差异规格评论

差异

Kingston 39P5429-006.AO01 2GB

需要考虑的原因
Kingston 39P5429-006.AO01 2GB

报告一个错误

更快的读取速度，GB/s

6 18.2

测试中的平均数值

Crucial Technology BL8G32C16U4WL.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 44

左右 -57% 更低的延时
更快的写入速度，GB/s

14.6 1,892.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston 39P5429-006.AO01 2GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 28
读取速度，GB/s

6,181.5 18.2
写入速度，GB/s

1,892.9 14.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

851 3384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M2C3000C16 4GB

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Samsung M378T5663QZ3-CF7 2GB

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Avant Technology F641GU67F9333G 8GB

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Micron Technology 36ASF4G72PZ-2G1B1 32GB

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Samsung M471A2K43BB1-CTD 16GB

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G Skill Intl F4-2800C18-8GRS 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

Crucial Technology BLE16G4D32AEEA.K16FB 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905622-024.A00G 4GB

Kingston 9905622-024.A00G 4GB