Kingston 9905403-061.A00LF 2GB vs Corsair CMK8GX4M2A2666C16 4GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Corsair CMK8GX4M2A2666C16 4GB

需要考虑的原因
Corsair CMK8GX4M2A2666C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 57

左右 -84% 更低的延时
更快的读取速度，GB/s

15.7 6.8

测试中的平均数值
更快的写入速度，GB/s

11.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Corsair CMK8GX4M2A2666C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 31
读取速度，GB/s

6.8 15.7
写入速度，GB/s

5.5 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 2787

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905403-061.A00LF 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Kingston 9905403-444.A00LF 4GB

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