Kingston 9905403-156.A00LF 2GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 42

左右 57% 更低的延时
更快的读取速度，GB/s

17.7 12.7

测试中的平均数值
更快的写入速度，GB/s

13.1 10.2

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 42
读取速度，GB/s

17.7 12.7
写入速度，GB/s

13.1 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43EB1-CWE 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston 9905458-017.A01LF 4GB

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Asgard VMA42UG-MEC1U2AW1 8GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMWX8GD3000C15W4 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M393B1K70DH0-CH9 8GB

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