Kingston 9965525-018.A00LF 4GB vs Smart Modular SF4641G8CK8IEHLSBG 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Smart Modular SF4641G8CK8IEHLSBG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8IEHLSBG 8GB

报告一个错误

更快的读取速度，GB/s

14.8 13.2

测试中的平均数值
更快的写入速度，GB/s

10.4 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

13.2 14.8
写入速度，GB/s

8.6 10.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2196 2515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Corsair CM4B8G1J3000K16W4 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Corsair CMT128GX4M8C3000C15 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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Infineon (Siemens) AET560UD00-370A98Z 256MB