Kingston 9965525-155.A00LF 8GB vs Kingston KHX2400C14S4/4G 4GB

总分

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分

Kingston KHX2400C14S4/4G 4GB

Kingston KHX2400C14S4/4G 4GB

差异规格评论

差异

Kingston 9965525-155.A00LF 8GB

需要考虑的原因
Kingston 9965525-155.A00LF 8GB

报告一个错误

Kingston KHX2400C14S4/4G 4GB

需要考虑的原因
Kingston KHX2400C14S4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的读取速度，GB/s

17.4 6.4

测试中的平均数值
更快的写入速度，GB/s

13.2 3.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-155.A00LF 8GB

Kingston KHX2400C14S4/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

6.4 17.4
写入速度，GB/s

3.7 13.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1129 2663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C19-8GVSB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMK32GX4M4A2666C16 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

JUHOR JHD3000U1908JG 8GB

JUHOR JHD3000U1908JG 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Ramaxel Technology RMUA5200ME78HAF-3200 8GB

Ramaxel Technology RMUA5200ME78HAF-3200 8GB