Kingston 99U5428-018.A00LF 8GB vs Samsung M474A2K43BB1-CPB 16GB

总分

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

总分

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

差异规格评论

差异

Kingston 99U5428-018.A00LF 8GB

需要考虑的原因
Kingston 99U5428-018.A00LF 8GB

报告一个错误

Samsung M474A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M474A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

14.3 12.2

测试中的平均数值
更快的写入速度，GB/s

8.6 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5428-018.A00LF 8GB

Samsung M474A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 28
读取速度，GB/s

12.2 14.3
写入速度，GB/s

8.2 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2128 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5428-018.A00LF 8GB

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Samsung M378A5244BB0-CRC 4GB

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Kingston 9905469-143.A00LF 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SK Hynix HMA81GU6CJR8N-XN 8GB

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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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