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Kingston 99U5471-012.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
比较
Kingston 99U5471-012.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
总分
Kingston 99U5471-012.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5471-012.A00LF 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
41
左右 -37% 更低的延时
更快的读取速度,GB/s
14.5
12.7
测试中的平均数值
更快的写入速度,GB/s
9.0
7.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 99U5471-012.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
30
读取速度,GB/s
12.7
14.5
写入速度,GB/s
7.5
9.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2039
2374
Kingston 99U5471-012.A00LF 4GB RAM的比较
Kingston 9905474-019.A00LF 2GB
A-DATA Technology AD5U48008G-B 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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