Kingston 99U5474-010.A00LF 2GB vs Crucial Technology CT4G4SFS824A.C8FBR2 4GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 -9% 更低的延时
更快的读取速度，GB/s

16.6 13.8

测试中的平均数值
更快的写入速度，GB/s

12.8 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 23
读取速度，GB/s

13.8 16.6
写入速度，GB/s

7.8 12.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1995 2689

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5673EH1-CF8 2GB

Samsung M471B5673EH1-CF8 2GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Samsung M471B5273BH1-CF8 4GB

Samsung M471B5273BH1-CF8 4GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB