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Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
比较
Kingston 99U5474-010.A00LF 2GB vs SK Hynix HMA425S6BJR6N-UH 2GB
总分
Kingston 99U5474-010.A00LF 2GB
总分
SK Hynix HMA425S6BJR6N-UH 2GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5474-010.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
25
101
左右 75% 更低的延时
更快的写入速度,GB/s
7.8
7.0
测试中的平均数值
需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB
报告一个错误
更快的读取速度,GB/s
14.2
13.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
101
读取速度,GB/s
13.8
14.2
写入速度,GB/s
7.8
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1995
1313
Kingston 99U5474-010.A00LF 2GB RAM的比较
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-016.A00LF 4GB
SK Hynix HMA425S6BJR6N-UH 2GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CM4X16GE2400C14K4 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Kingston 9905595-011.A00LF 2GB
Kingston 99U5458-001.A00LF 2GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9965604-027.D00G 8GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Avant Technology F6451U64F9333G 4GB
Kingston 9905734-063.A00G 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C16-8GTRS 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
报告一个错误
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Bug description
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