Kingston 99U5584-004.A00LF 4GB vs Samsung M393A1G43DB1-CRC 8GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时
更快的读取速度，GB/s

13.1 10.8

测试中的平均数值

Samsung M393A1G43DB1-CRC 8GB

需要考虑的原因
Samsung M393A1G43DB1-CRC 8GB

报告一个错误

更快的写入速度，GB/s

8.5 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

Samsung M393A1G43DB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

13.1 10.8
写入速度，GB/s

7.7 8.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2009 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Corsair CM2X1024-8500C5D 1GB

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Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

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Team Group Inc. UD5-6400 16GB

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Kingston 9965525-018.A00LF 4GB

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Mushkin MR[A/B]4U320LLLM16G 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB