Kingston 99U5595-005.A00LF 2GB vs Corsair CMK16GX4M2E3200C16 8GB

总分

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

总分

Corsair CMK16GX4M2E3200C16 8GB

Corsair CMK16GX4M2E3200C16 8GB

差异规格评论

差异

Kingston 99U5595-005.A00LF 2GB

需要考虑的原因
Kingston 99U5595-005.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Corsair CMK16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2E3200C16 8GB

报告一个错误

更快的读取速度，GB/s

19.2 13.2

测试中的平均数值
更快的写入速度，GB/s

13.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5595-005.A00LF 2GB

Corsair CMK16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

13.2 19.2
写入速度，GB/s

7.3 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1489 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMT16GX4M2C3200C16 8GB

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Crucial Technology CT16G4SFD824A.M16FH 16GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

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Kingston 9905403-038.A00LF 4GB

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Kingston KF3600C18D4/32GX 32GB

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Samsung M378A1G43DB0-CPB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB