Kingston ACR256X64D3S1333C9 2GB vs Corsair CMD64GX4M8B3200C16 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Corsair CMD64GX4M8B3200C16 8GB

需要考虑的原因
Corsair CMD64GX4M8B3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.8 11.9

测试中的平均数值
更快的写入速度，GB/s

11.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Corsair CMD64GX4M8B3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.9 14.8
写入速度，GB/s

8.5 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 3073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Corsair CMK64GX4M4B3000C15 16GB

Corsair CMK64GX4M4B3000C15 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Kingston ACR256X64D3U1333C9 2GB

Kingston ACR256X64D3U1333C9 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB