Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology 16G4UD2400.C16BD1 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Crucial Technology 16G4UD2400.C16BD1 16GB

需要考虑的原因
Crucial Technology 16G4UD2400.C16BD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

15.5 11.9

测试中的平均数值
更快的写入速度，GB/s

10.4 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology 16G4UD2400.C16BD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

11.9 15.5
写入速度，GB/s

8.5 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston KHX2933C17S4/32G 32GB

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Kingston ACR16D3LFS1KBG/2G 2GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMW32GX4M4K4266C19 8GB

Corsair CMW32GX4M4K4266C19 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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SK Hynix HMA42GR7MFR4N-TF 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston HP26D4U9S8MD-8 8GB

Kingston HP26D4U9S8MD-8 8GB