Kingston ACR256X64D3S1333C9 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

17.2 11.9

测试中的平均数值
更快的写入速度，GB/s

13.0 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.9 17.2
写入速度，GB/s

8.5 13.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 3004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M1D2666C16 8GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-3600C19-8GVSB 8GB

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G Skill Intl F4-4000C18-16GTZR 16GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMSX16GX4M1A2400C16 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Corsair CML8GX3M2A1866C9 4GB

Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB