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Kingston ACR512X64D3S13C9G 4GB
Corsair CM4X16GE2933C19S2 16MB

Kingston ACR512X64D3S13C9G 4GB vs Corsair CM4X16GE2933C19S2 16MB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
Corsair CM4X16GE2933C19S2 16MB 需要考虑的原因
Corsair CM4X16GE2933C19S2 16MB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.5
    测试中的平均数值

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4X16GE2933C19S2 16MB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    11.5 left arrow 14.1
  • 写入速度，GB/s
    8.5 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow no data
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow no data
  • 排名PassMark (越多越好)
    1756 left arrow 2918

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Corsair CM4X16GE2933C19S2 16MB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2666C16-4GRB 4GB
内存RAM
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Corsair CMK32GX5M2B5600C36 16GB
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Chun Well Technology Holding Limited MD4U1632161DCW 16G
内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM