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Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB

Kingston ACR512X64D3S13C9G 4GB vs Crucial Technology BLS16G4S26BFSD.16FD 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
Crucial Technology BLS16G4S26BFSD.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    11.5 left arrow 15.6
  • 写入速度，GB/s
    8.5 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2969

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston ACR512X64D3S13C9G 4GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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SK Hynix HMP112S6EFR6C-S6 1GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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内存RAM
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Kingston 99U5428-018.A00LF 8GB
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内存RAM
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Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
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Kingston 99U5471-056.A00LF 8GB
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内存RAM