Kingston ACR512X64D3S13C9G 4GB vs Samsung M386A4K40BB0-CRC 32GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的写入速度，GB/s

8.5 5.9

测试中的平均数值

Samsung M386A4K40BB0-CRC 32GB

需要考虑的原因
Samsung M386A4K40BB0-CRC 32GB

报告一个错误

更快的读取速度，GB/s

11.8 11.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Samsung M386A4K40BB0-CRC 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

11.5 11.8
写入速度，GB/s

8.5 5.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1756 1984

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1600 4GB

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Micron Technology 8ATF1G64HZ-2G6J1 8GB

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Kingston 9965525-018.A00LF 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology CT4G4DFS8266.C8FF 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

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Kingston 9965525-018.A00LF 4GB

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Kingston 9905624-051.A00G 8GB

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Kingston K531R8-MIN 4GB

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Kingston 9905744-005.A00G 16GB