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Kingston HX318C10FK/4 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
比较
Kingston HX318C10FK/4 4GB vs Crucial Technology CT4G4DFS8213.C8FAR11 4GB
总分
Kingston HX318C10FK/4 4GB
总分
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
69
左右 -97% 更低的延时
更快的读取速度,GB/s
13.7
6.1
测试中的平均数值
更快的写入速度,GB/s
10.7
4.1
测试中的平均数值
更高的内存带宽,mbps
17000
14900
左右 1.14 更高的带宽
规格
完整的技术规格清单
Kingston HX318C10FK/4 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
69
35
读取速度,GB/s
6.1
13.7
写入速度,GB/s
4.1
10.7
内存带宽,mbps
14900
17000
Other
描述
PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-10-9-28 / 1866 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1116
2731
Kingston HX318C10FK/4 4GB RAM的比较
Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR16GX4M2Z3200C16 8GB
Kingston HX318C10FK/4 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Golden Empire CL16-16-16 D4-3000 4GB
A-DATA Technology DQKD1A08 1GB
Kingston 9965669-027.A00G 16GB
Kingston 9905403-174.A00LF 2GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
A-DATA Technology DDR3 1333G 2GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Transcend Information TS2GLH64V1B 16GB
Samsung M471B5273EB0-CK0 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Panram International Corporation PUD42400C154G2NJK 4GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Kingston 99U5474-022.A00LF 2GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
报告一个错误
×
Bug description
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