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Kingston K1N7HK-ELC 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
比较
Kingston K1N7HK-ELC 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
总分
Kingston K1N7HK-ELC 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston K1N7HK-ELC 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
34
左右 24% 更低的延时
更快的读取速度,GB/s
12.6
11.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
报告一个错误
更快的写入速度,GB/s
9.5
7.7
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston K1N7HK-ELC 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
34
读取速度,GB/s
12.6
11.1
写入速度,GB/s
7.7
9.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1820
2319
Kingston K1N7HK-ELC 2GB RAM的比较
SK Hynix HMA41GR7AFR4N-UH 8GB
Hewlett-Packard 7EH55AA# 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM的比较
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471B5273CH0-CH9 4GB
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PNY Electronics PNY 2GB
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Crucial Technology BL16G32C16U4B.16FE 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Kingston KHX1600C9S3L/8G 8GB
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Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK8GX4M2B4133C19 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CM4X8GE2666C16K4 8GB
报告一个错误
×
Bug description
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