Kingston KHX1600C9D3/4G 4GB vs Corsair CMD32GX4M2C3200C14M 16GB

总分

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

总分

Corsair CMD32GX4M2C3200C14M 16GB

Corsair CMD32GX4M2C3200C14M 16GB

差异规格评论

差异

Kingston KHX1600C9D3/4G 4GB

需要考虑的原因
Kingston KHX1600C9D3/4G 4GB

报告一个错误

Corsair CMD32GX4M2C3200C14M 16GB

需要考虑的原因
Corsair CMD32GX4M2C3200C14M 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 36

左右 -100% 更低的延时
更快的读取速度，GB/s

21.3 14.5

测试中的平均数值
更快的写入速度，GB/s

16.9 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4G 4GB

Corsair CMD32GX4M2C3200C14M 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 18
读取速度，GB/s

14.5 21.3
写入速度，GB/s

9.7 16.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 3836

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair VS1GB800D2 1GB

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Corsair CMK64GX4M2D3000C16 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMA42GR7MFR4N-TF 16GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB