Kingston KP223C-ELD 2GB vs G Skill Intl F4-3800C14-16GTZN 16GB

总分

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

差异规格评论

差异

Kingston KP223C-ELD 2GB

需要考虑的原因
Kingston KP223C-ELD 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

G Skill Intl F4-3800C14-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3800C14-16GTZN 16GB

报告一个错误

更快的读取速度，GB/s

21.7 13.4

测试中的平均数值
更快的写入速度，GB/s

16.6 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KP223C-ELD 2GB

G Skill Intl F4-3800C14-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.4 21.7
写入速度，GB/s

8.8 16.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2137 3806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP125S64CP8-S6 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 4ATF1G64HZ-3G2B2 8GB

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Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Samsung M393A4K40BB2-CTD 32GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CMK16GX4M2L3200C16 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Avant Technology J642GU42J7240NF 16GB

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Samsung M471B5273CH0-CH9 4GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB