Kingston KP4T2F-PSB 4GB vs G Skill Intl F4-4400C19-8GTZKK 8GB

总分

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

总分

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

差异规格评论

差异

Kingston KP4T2F-PSB 4GB

需要考虑的原因
Kingston KP4T2F-PSB 4GB

报告一个错误

G Skill Intl F4-4400C19-8GTZKK 8GB

需要考虑的原因
G Skill Intl F4-4400C19-8GTZKK 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

18.4 13.9

测试中的平均数值
更快的写入速度，GB/s

16.2 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KP4T2F-PSB 4GB

G Skill Intl F4-4400C19-8GTZKK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

13.9 18.4
写入速度，GB/s

9.3 16.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2317 3701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2864QZ3-CF7 1GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB