Kingston KVR16N11/8-SP 8GB vs G Skill Intl F4-2800C15-8GVRB 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

G Skill Intl F4-2800C15-8GVRB 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GVRB 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13.9

测试中的平均数值
更快的写入速度，GB/s

13.3 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

13.9 16.8
写入速度，GB/s

9.5 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 3212

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 9905598-026.A00G 16GB

Kingston 9905598-026.A00G 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB