RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR533D2N4 512MB
Kingston 9905598-044.A00G 16GB

Kingston KVR533D2N4 512MB vs Kingston 9905598-044.A00G 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Kingston 9905598-044.A00G 16GB 需要考虑的原因
Kingston 9905598-044.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 75
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Kingston 9905598-044.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 25
  • 读取速度，GB/s
    1,943.5 left arrow 15.7
  • 写入速度，GB/s
    1,672.1 left arrow 8.7
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    301 left arrow 2609

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Kingston 9905598-044.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4D3000C16 8GB
Corsair CMK32GX4M4D3000C16 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3000C14-8GTZR 8GB
G Skill Intl F4-3000C14-8GTZR 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMA82GS6DJR8N-WM 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMW64GX4M4C3200C16 16GB
Corsair CMW64GX4M4C3200C16 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM