Kreton Corporation 51624xxxx68x35xxxx 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB

需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB

报告一个错误

更快的读取速度，GB/s

4 12

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更快的写入速度，GB/s

9.1 1,855.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,168.0 12.0
写入速度，GB/s

1,855.7 9.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

680 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F6451U64F9333G 4GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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Kingston 99P5471-002.A00LF 2GB

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Samsung M378B5273CH0-CH9 4GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMK32GX4M2Z2400C16 16GB

Corsair CMK32GX4M2Z2400C16 16GB

Corsair VSA2GSDS667C4 2GB

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Crucial Technology BLT4G4D30AETA.K8FD 4GB

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Kingston 9905403-156.A00LF 2GB

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Kingston HP698651-154-MCN 8GB

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