Micron Technology 16JSF25664HZ-1G1F1 2GB vs G Skill Intl F4-2133C15-4GRK 4GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

G Skill Intl F4-2133C15-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时
更快的读取速度，GB/s

13.5 10.5

测试中的平均数值
更快的写入速度，GB/s

10.7 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-2133C15-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

10.5 13.5
写入速度，GB/s

7.1 10.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 2689

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5624-003.A00G 8GB

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Kingston KHX3000C15/16GX 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Corsair CMT32GX4M4C3000C15 8GB

Corsair CMT32GX4M4C3000C15 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB