Micron Technology 16JTF51264AZ-1G4M1 4GB vs Samsung M378B5173DB0-CK0 4GB

总分

Micron Technology 16JTF51264AZ-1G4M1 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB

总分

Samsung M378B5173DB0-CK0 4GB

Samsung M378B5173DB0-CK0 4GB

差异规格评论

差异

Micron Technology 16JTF51264AZ-1G4M1 4GB

需要考虑的原因
Micron Technology 16JTF51264AZ-1G4M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 42

左右 5% 更低的延时
更快的读取速度，GB/s

14.2 13.8

测试中的平均数值
更快的写入速度，GB/s

8.4 8.1

测试中的平均数值

Samsung M378B5173DB0-CK0 4GB

需要考虑的原因
Samsung M378B5173DB0-CK0 4GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264AZ-1G4M1 4GB

Samsung M378B5173DB0-CK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 42
读取速度，GB/s

14.2 13.8
写入速度，GB/s

8.4 8.1
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2142 2187

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF51264AZ-1G4M1 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB

Samsung M378B5173DB0-CK0 4GB

Samsung M378B5173DB0-CK0 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMT64GX4M8Z3600C16 8GB

Corsair CMT64GX4M8Z3600C16 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB