Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS16G4D30BESB.16FD 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 50

左右 44% 更低的延时

Crucial Technology BLS16G4D30BESB.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D30BESB.16FD 16GB

报告一个错误

更快的读取速度，GB/s

17.2 12.9

测试中的平均数值
更快的写入速度，GB/s

13.1 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 50
读取速度，GB/s

12.9 17.2
写入速度，GB/s

9.0 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB