Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology CT8G4DFD824A.C16FBD2 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FBD2 8GB

报告一个错误

更快的读取速度，GB/s

16.7 12.9

测试中的平均数值
更快的写入速度，GB/s

10.4 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.9 16.7
写入速度，GB/s

9.0 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP164U64CP6-Y5 512MB

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Samsung M471A2K43BB1-CTD 16GB

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Samsung M471B5273EB0-CK0 4GB

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Samsung M395T5663QZ4-CE66 1GB

Samsung M395T5663QZ4-CE66 1GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston 9905630-031.A00G 16GB

Kingston 9905630-031.A00G 16GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3200C16-8GVSB 8GB

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Samsung M395T5160QZ4-CE66 2GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB