Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kingmax Semiconductor GLLH22F-18KII5------ 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

需要考虑的原因
Kingmax Semiconductor GLLH22F-18KII5------ 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时
更快的读取速度，GB/s

18.9 12.9

测试中的平均数值
更快的写入速度，GB/s

13.6 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

12.9 18.9
写入速度，GB/s

9.0 13.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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AMD R5S38G1601U2S 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK16GX4M2B3466C16 8GB

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Kingston 99U5474-023.A00LF 4GB

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Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CMK16GX4M2C3000C15 8GB

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Kingston 9905471-006.A00LF 4GB

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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Kingston 9965433-034.A00LF 4GB

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Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB