Micron Technology 16JTF51264HZ-1G6M1 4GB vs Kllisre M378A5143EB2-CRC 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 40% 更低的延时
更快的读取速度，GB/s

12.9 11.1

测试中的平均数值
更快的写入速度，GB/s

9.0 7.9

测试中的平均数值

Kllisre M378A5143EB2-CRC 4GB

需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kllisre M378A5143EB2-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 47
读取速度，GB/s

12.9 11.1
写入速度，GB/s

9.0 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C16-8GTZRC 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CM4X16GE2400C16S4 16GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Kingston 9905403-061.A00LF 2GB

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA82GR7JJR8N-VK 16GB

SK Hynix HMA82GR7JJR8N-VK 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3000C15-8GRKB 8GB