Micron Technology 16JTF51264HZ-1G6M1 4GB vs Ramaxel Technology RMSA3300ME78HBF-2666 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

需要考虑的原因
Ramaxel Technology RMSA3300ME78HBF-2666 16GB

报告一个错误

更快的读取速度，GB/s

14.7 12.9

测试中的平均数值
更快的写入速度，GB/s

9.9 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.9 14.7
写入速度，GB/s

9.0 9.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-GEN D4H4GL30A8TS5 4GB

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G Skill Intl F4-4000C18-8GTZKK 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston KV0M5R-MIE 8GB

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Samsung M378B5273DH0-CH9 4GB

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Kingston 9905474-019.A00LF 2GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

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G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

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Corsair CMSX32GX4M2A3000C18 16GB

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Gloway International (HK) STKD4GAM2400-F 8GB

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Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB