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Micron Technology 16KTF51264HZ-1G6M1 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB vs Apacer Technology AQD-SD4U4GN24-SG 4GB

总分
star star star star star
Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分
star star star star star
Apacer Technology AQD-SD4U4GN24-SG 4GB

Apacer Technology AQD-SD4U4GN24-SG 4GB

差异 规格 评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 83
    左右 48% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 6.5
    测试中的平均数值
Apacer Technology AQD-SD4U4GN24-SG 4GB 需要考虑的原因
Apacer Technology AQD-SD4U4GN24-SG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF51264HZ-1G6M1 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 83
  • 读取速度，GB/s
    10.6 left arrow 14.8
  • 写入速度，GB/s
    6.9 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1647 left arrow 1370

Micron Technology 16KTF51264HZ-1G6M1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited KD4AGU880-36A180C 16GB

Apacer Technology AQD-SD4U4GN24-SG 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16KTF51264HZ-1G6M1 4GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMW32GX4M2Z3600C18 16GB
Corsair CMW32GX4M2Z3600C18 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-2400C15-8GVS 8GB
G Skill Intl F4-2400C15-8GVS 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905630-051.A00G 16GB
Kingston 9905630-051.A00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK64GX4M8B3200C16 8GB
Corsair CMK64GX4M8B3200C16 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CMK64GX4M8B2800C14 8GB
Corsair CMK64GX4M8B2800C14 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM