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Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs Crucial Technology BLS8G4D240FSB.16FBD2 8GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
16.4
测试中的平均数值
更快的写入速度,GB/s
2,107.0
12.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
58
左右 -76% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
33
读取速度,GB/s
4,025.3
16.4
写入速度,GB/s
2,107.0
12.4
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
670
2949
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLS8G4D240FSBK.8FBD 8GB
报告一个错误
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Bug description
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