Mushkin 991586 2GB vs Crucial Technology BLS8G4D30BESBK.8FB 8GB

总分

Mushkin 991586 2GB

Mushkin 991586 2GB

总分

Crucial Technology BLS8G4D30BESBK.8FB 8GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

差异规格评论

差异

Mushkin 991586 2GB

需要考虑的原因
Mushkin 991586 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Crucial Technology BLS8G4D30BESBK.8FB 8GB

需要考虑的原因
Crucial Technology BLS8G4D30BESBK.8FB 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13.8

测试中的平均数值
更快的写入速度，GB/s

12.6 7.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Mushkin 991586 2GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

13.8 16.8
写入速度，GB/s

7.9 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2156 3246

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Patriot Memory (PDP Systems) PSD251280081 512MB

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Essencore Limited IMA41GU6MFR8N-CF0 8GB

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Samsung M393B2G70BH0-YK0 16GB

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston 9905678-029.A00G 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

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Micron Technology 36ASF2G72PZ-2G6E1 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-2400C17-8GISM 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston KHX3200C18D4/16G 16GB