Nanya Technology M2F4G64CB8HG4N-DI 4GB vs Crucial Technology CT8G4DFD8213.C16FAR1 8GB

总分

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Nanya Technology M2F4G64CB8HG4N-DI 4GB

总分

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

差异规格评论

差异

Nanya Technology M2F4G64CB8HG4N-DI 4GB

需要考虑的原因
Nanya Technology M2F4G64CB8HG4N-DI 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FAR1 8GB

报告一个错误

更快的读取速度，GB/s

14.6 14.1

测试中的平均数值
更快的写入速度，GB/s

10.5 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4G64CB8HG4N-DI 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

14.1 14.6
写入速度，GB/s

9.4 10.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2340 2760

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMK16GX4M4C3000C16 4GB

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Kingston KP4T2F-PSB 4GB

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G Skill Intl F4-2400C17-8GNT 8GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB