Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Corsair CM4X4GF2400C14K4 4GB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更快的读取速度，GB/s

2 16.3

测试中的平均数值

Corsair CM4X4GF2400C14K4 4GB

需要考虑的原因
Corsair CM4X4GF2400C14K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 92

左右 -300% 更低的延时
更快的写入速度，GB/s

11.9 1,266.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CM4X4GF2400C14K4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

92 23
读取速度，GB/s

2,105.4 16.3
写入速度，GB/s

1,266.1 11.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

339 2629

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Kingston 9905403-174.A00LF 2GB

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Kingston 9905403-011.A03LF 2GB

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Asgard VMA45UG-MEC1U2AW2 8GB

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Corsair CMWX8GD3000C16W4D 8GB

Kingston K531R8-MIN 4GB

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Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Transcend Information TS512MLH64V4H 4GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB