Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Crucial Technology CT4G4DFS8266.C8FG 4GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

Crucial Technology CT4G4DFS8266.C8FG 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FG 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

15.8 14.9

测试中的平均数值
更快的写入速度，GB/s

9.9 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

14.9 15.8
写入速度，GB/s

9.5 9.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2292 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CM4X8GE2400C16K4 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT8G4DFS8266.M8FJ 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Transcend Information TS1GLH72V1H 8GB

Transcend Information TS1GLH72V1H 8GB

SpecTek Incorporated ?????????????????? 2GB

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SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

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Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB