Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-4000C16-16GVKA 16GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-4000C16-16GVKA 16GB

G Skill Intl F4-4000C16-16GVKA 16GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

G Skill Intl F4-4000C16-16GVKA 16GB

需要考虑的原因
G Skill Intl F4-4000C16-16GVKA 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 36

左右 -100% 更低的延时
更快的读取速度，GB/s

17.9 14.9

测试中的平均数值
更快的写入速度，GB/s

14.9 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-4000C16-16GVKA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 18
读取速度，GB/s

14.9 17.9
写入速度，GB/s

9.5 14.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 3871

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3800C14-16GTZN 16GB

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Kingston 99U5701-049.A00G 16GB

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Kingston 9965516-430.A00G 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB