Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

更快的读取速度，GB/s

14.9 14.2

测试中的平均数值
更快的写入速度，GB/s

9.5 7.4

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

14.9 14.2
写入速度，GB/s

9.5 7.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2292 2104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G4AT 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Corsair VSA2GSDS667C4 2GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Corsair CMK64GX4M4C3000C15 16GB

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Avant Technology F6451U64F9333G 4GB

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