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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1G43TB1-CTD 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Samsung M378A1G43TB1-CTD 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
Samsung M378A1G43TB1-CTD 8GB 需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 72
    左右 -157% 更低的延时
  • 更快的写入速度，GB/s
    13.7 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1G43TB1-CTD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 28
  • 读取速度，GB/s
    4,241.0 left arrow 16.6
  • 写入速度，GB/s
    1,938.7 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3007

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Samsung M378A1G43TB1-CTD 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
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Corsair CMK128GX4M8X3800C19 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Essencore Limited KD4AGS88A-26N1600 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM