RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
总分
Nanya Technology NT2GT64U8HD0BY-AD 2GB
总分
Crucial Technology BLS16G4D30AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
17.4
测试中的平均数值
更快的写入速度,GB/s
2,256.8
13.1
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
64
左右 -129% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
28
读取速度,GB/s
4,651.3
17.4
写入速度,GB/s
2,256.8
13.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
837
3437
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA41GR7MFR4N-TF 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston HP26D4S9S1ME-4 4GB
Transcend Information JM3200HLB-8G 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M378A5244CB0-CVF 4GB
Kingston KHX1600C9D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA851S6CJR6N-XN 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Mushkin 99[2/7/4]199[F/T] 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Kingston 99U5471-020.A00LF 4GB
Samsung M471A2K43CB1-CRCR 16GB
报告一个错误
×
Bug description
Source link