Nanya Technology NT2GT64U8HD0BY-AD 2GB vs SK Hynix HMA451U6AFR8N-TF 4GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,256.8 10.6

测试中的平均数值

SK Hynix HMA451U6AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 64

左右 -73% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMA451U6AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 37
读取速度，GB/s

4,651.3 14.7
写入速度，GB/s

2,256.8 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 2438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-2400C17-4GIS 4GB

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CM4X8GF2666C18S2 8GB

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Corsair CMK16GX4M1Z3600C18 16GB

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Team Group Inc. DDR4 2800 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology CT16G4SFS8266.C8FE 16GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Kingston ACR16D3LS1KNG/8G 8GB

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Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

Kingston 9905471-006.A00LF 4GB

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Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB