RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-4500C19-8GTZKKE 8GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
G Skill Intl F4-4500C19-8GTZKKE 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4500C19-8GTZKKE 8GB
报告一个错误
低于PassMark测试中的延时,ns
15
42
左右 -180% 更低的延时
更快的读取速度,GB/s
23
9.7
测试中的平均数值
更快的写入速度,GB/s
21.0
6.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
15
读取速度,GB/s
9.7
23.0
写入速度,GB/s
6.0
21.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1396
4039
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Vulcan-1600 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Kingston KHX3200C16D4/16GX 16GB
Kingston KHX426C13/8G 8GB
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology DDR4 3333 2OZ 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Samsung M393B2G70BH0-CH9 16GB
Essencore Limited KD48GU880-36A180X 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X8GC3000C15K4 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Samsung M393B5170FH0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 9905471-002.A00LF 2GB
Kingston 9932301-P01.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
SpecTek Incorporated 16G 2666 CL 19 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C19-8GSXF 8GB
报告一个错误
×
Bug description
Source link