Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMV4GX4M1A2666C18 4GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Corsair CMV4GX4M1A2666C18 4GB

需要考虑的原因
Corsair CMV4GX4M1A2666C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

15.1 13.7

测试中的平均数值
更快的写入速度，GB/s

11.0 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMV4GX4M1A2666C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

13.7 15.1
写入速度，GB/s

9.6 11.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 1847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB