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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3333C16-8GTZKW 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
G Skill Intl F4-3333C16-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 35
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 22
  • 读取速度，GB/s
    13.7 left arrow 17.0
  • 写入速度，GB/s
    9.6 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3207

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Neo Forza NMUD416E82-3600 16GB
Neo Forza NMUD416E82-3600 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CM4B8G1J3000K16W4 8GB
Corsair CM4B8G1J3000K16W4 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMWX8GF2666C16W4 8GB
Corsair CMWX8GF2666C16W4 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston LV26D4S9S8HJ-8 8GB
Kingston LV26D4S9S8HJ-8 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM
Kingston 99U5474-026.A00LF 4GB
Kingston 99U5474-026.A00LF 4GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM