Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 8ATF1G64HZ-2G3E2 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Micron Technology 8ATF1G64HZ-2G3E2 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

15.2 13.7

测试中的平均数值
更快的写入速度，GB/s

11.7 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

13.7 15.2
写入速度，GB/s

9.6 11.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F4-2933C14-16GTZRX 16GB

Avant Technology F6451U64F9333G 4GB

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Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

Kingston 9905403-061.A00LF 2GB

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Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Samsung M471A1K43EB1-CWE 8GB

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Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB