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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
18
35
左右 -94% 更低的延时
更快的读取速度,GB/s
20.4
13.7
测试中的平均数值
更快的写入速度,GB/s
17.2
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
18
读取速度,GB/s
13.7
20.4
写入速度,GB/s
9.6
17.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
3814
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-001.A00LF 4GB
Kingston KHX3200C18D4/4G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Kingston KVR16N11/8-SP 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Samsung M395T2953CZ4-CE61 1GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston 9905599-010.A00G 4GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Mushkin 991586 2GB
Kllisre 8GB
Mushkin 991586 2GB
Samsung M391A2K43BB1-CPB 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2800C15-16GVR 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2666C15-4GRR 4GB
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KP4T2F-PSB 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
报告一个错误
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Bug description
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