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Peak Electronics 256X64M-67E 2GB
SK Hynix HMA851S6DJR6N-VK 4GB

Peak Electronics 256X64M-67E 2GB vs SK Hynix HMA851S6DJR6N-VK 4GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 40
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 15
    测试中的平均数值
SK Hynix HMA851S6DJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851S6DJR6N-VK 4GB
报告一个错误
  • 更快的写入速度，GB/s
    11.2 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 40
  • 读取速度，GB/s
    5,022.9 left arrow 15.0
  • 写入速度，GB/s
    1,597.0 left arrow 11.2
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    753 left arrow 2100

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

SK Hynix HMA851S6DJR6N-VK 4GB RAM的比较

Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
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内存RAM
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内存RAM
Avant Technology F6451U64F9333G 4GB
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Kingston 9965662-015.A00G 16GB
内存RAM
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Samsung M378A5244CB0-CRC 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZNC 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
内存RAM