PNY Electronics PNY 2GB vs Crucial Technology CT4G4SFS8213.C8FADP 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.3 13.8

测试中的平均数值
更快的写入速度，GB/s

11.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.8 14.3
写入速度，GB/s

8.4 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK32GX4M4C3400C16 8GB

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Samsung M378B5773DH0-CH9 2GB

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Mushkin 99[2/7/4]202F 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston KHX2933C17D4/8G 8GB

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Kingston 99U5403-036.A00G 4GB

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Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology BLS4G4S240FSD.8FBD 4GB

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Kingston 9905471-002.A00LF 2GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB